Tokyo Ohka Kogyo Product Site
Wet Etching Resist
Negative Resists Resistant to Both Acidic and Alkaline Etchants
We offer rubber resists that are resistant to both acidic and alkaline etchants, as well as g-line, i-line, KrF positive and negative photoresists that enable fine pattern formation by wet etching with acidic etchants.
Rubber-Based Negative Resist
This is a rubber-based negative resist that is resistant to acidic and alkaline etchants. The use of a rubber-based resin as the main raw material provides excellent adhesion and chemical resistance, making it suitable for long-time wet etching processes and reducing the amount of side etching compared to Novolak-based positive resists.
Rubber-Based Negative Tone Type
Application Conditions
Substrate
SiO₂ (700nm)
Resist Thickness
1.0μm
Pre-bake
80~85℃, 20min (warm circulating dryer)
Exposure
G/I/H Broadbent Exposure System
(11.0mW/cm2 405nm)
Post-bake
145±5℃, 20-30min (thermal mechanical dryer)
Development and Rinse
OMR developer, OMR rinse solution
| Etching Conditions HF:NH4F 23℃, 5min |
|
|---|---|
| 5.0μm Line Pattern |  |
OMR in the text is a pending or registered trademark of TOK.
G-Line Positive Resist
A positive photoresist based on g-line Novolak resin with improved adhesion to substrates. It is suitable for wet etching with acid-based etchants. Compared to rubber-based negative resists, it has superior resolution, enabling wet etching of fine patterns.
Novolak Positive Tone Type
Application Conditions
Substrate
SiO₂
Pre-bake
90℃, 90sec
Exposure
g-line stepper
Post-bake
120℃, 5min (oven)
Development
NMD-W 2.38%, 65sec
| Etching Conditions HF:NH4F = 1:6 23℃, 20min |
|
|---|---|
| 5.0μm Line Pattern |  |
OFPR in the text is a pending or registered trademark of TOK.
I-Line Positive Resist THMR™-IP5700 ∕ I-Line Negative Resist TSMR™-iN080
We offer both positive tone and negative tone i-line resists that are suitable for wet etching and have excellent substrate adhesion.
Application Conditions
Substrate
SiO₂ (HMDS treatment, 110℃, 60sec)
Resist Thickness
5um
P.A.B.
90℃, 120sec
Exposure
i-line stepper (NA: 0.57, σ: 0.67)
P.E.B.
110℃, 60sec
Development
TMAH 2.38% paddle 60sec
Post Bake
100℃, 60sec
Etchant
BHF (NH4F・HF 21%aq.)
Etching Time
12min
| THMR-iP5700 | TSMR-iN080 | |
|---|---|---|
| Profile After Patterning |  |
 |
| After Wet Etching |  |
 |
| Side Etching Width | 2.61μm | 3.34μm |
THMR and TSMR in the text are pending or registered trademarks of TOK.
KrF Positive Resist TDUR-P802
The resist is designed for fine processing in high-resolution KrF wet etching processes with high resistance to etching agents and adhesion to the substrate. The resist is designed for use in wet etching after KrF lithography for sub-micron pattern sizes that cannot be achieved with i-line resists.
TDUR-P802 Resolvability
Application Conditions
Substrate
SiO₂ (HMDS treatment, 110℃, 60sec)
Resist Thickness
510nm
P.A.B.
110℃, 60sec
Exposure
KrF stepper (NA: 0.68)
P.E.B.
110℃, 60sec
Development
NMD-W 2.38%, 60sec
| 200nm Space | |
|---|---|
| EOP:13.0mJ |  |
TDUR-P802 Wet Etching Properties
Application Conditions
Substrate
SiO₂ (HMDS treatment)
Resist Thickness
510nm
P.A.B.
110℃, 60sec
Exposure
KrF stepper (NA: 0.68)
P.E.B.
110℃, 60sec
Development
NMD-W 2.38%, 60sec
Etching
HF:NH4F = 1:6, 660sec
| Resist Thickness 518nm | ||
|---|---|---|
| Post-bake | 110℃-300sec | 130℃-300sec |
| 5.0μm Line Pattern |  |
 |
| Side Etching Width | 3.02μm | 2.90μm |
| 600nm Contact Hole |  |
 |
| Side Etching Width | 1.02μm | 0.96μm |
TDUR in the text is a pending or registered trademark of TOK.
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