Bump Formation Resist

Resist for Photobumping for Copper, Tin, Nickel and Solder Electrolytic Plating such as Au Bumping, Cu Pillar and Microbumping

This is a high-resolution, positive-tone thick photoresist for electroplating applications, designed to provide excellent resistance to a wide range of metal plating solutions, including non-cyanide gold, silver, tin, copper, and nickel.It is widely used for electrode formation in advanced high-density semiconductor packaging technologies, such as 2.5D/3D through-silicon via (TSV) packages, stacked TSV memory, wafer-level chip-scale packages (WL-CSP), Cu pillar and flip-chip packages, as well as microbumps, gold stud bumps, and Cu posts for LCD driver applications.

The resist enables fine hole pattern formation with high sensitivity and offers strong adhesion to underlying substrates, providing a wide process margin during electroplating.In addition, compared with negative-tone resists, the resist film can be removed more easily after the plating process, contributing to cost reduction in bump electrode formation processes.A wide range of resist thicknesses from 10 to 100 µm is available to meet various process requirements.
We also offer a comprehensive lineup of process materials compatible with advanced semiconductor packaging technologies such as SiP (System in Package) and PoP (Package on Package).

Electrolytic Plating Photoresist Lineup

Photoresist for Cu Pillars and Microbumps

Cu Pillar Bump, Sn/Ag Bump, Microbump Formation

WLCSP Cu Pillar
WLCSP Cu Pillar
2.5D Silicon Interposer
2.5D Silicon Interposer

PMER P-BK Series

This is a positive-tone photoresist for electroplating processes, offering high resolution and excellent resistance to plating solutions.It is suitable for high-aspect-ratio electroplated electrode formation processes required for applications such as Cu pillar BGA and TSV memory microbumps.The resist supports continuous electroplating of Cu, Ni, and SnAg.In addition, it provides good stripping performance after the electroplating process, allowing the resist to be easily removed without causing damage to the electrodes.

Features

  • Positive tone type
  • Developer: TMAH 2.38%
  • Resist film thickness: 20µm〜65µm
  • Wide process margin & crack margin
  • Rectangular shape & good removability

Conditions

Substrate                                            :Cu
P.A.B.                                                    :145℃-300sec
Exposure                                             :i-line stepper (NA: 0.18)
P.E.B.                                                 :85℃-180sec
Development                                    :TMAH 2.38%
                60sec X 6 puddle

Resist Profile

  S/H 30μm S/H 20μm S/H 10μm
Resist Thickness
65μm
S/H 30μm S/H 20μm 65μ断面図_SH_10μm.png

PMER P-CS Series

This series of resists can be used for precious metal plating processes such as gold and palladium, and has high resistance to metal plating solutions.

Features

  • Fine gold plating
  • Positive tone type
  • Suitable film thickness range = 10~20μm

Photolithography Conditions

Substrate

Au

Film Thickness

20μm

Gold Plating Conditions

Pretreatment

O2 plasma ashing
0.15torr, 300W, 40℃, 60sec

Plating

Cyanide gold plating solution

Resist Stripping

TOK's resist stripper ST120

Pd Plating Conditions

Plating Solution Type

Pd plating solution pH = 7.5

Plating Conditions

1.5ASD 50℃, 48.6min

Pd Plating Thickness

18µm

Resist Stripping

ST-120, 45℃, 10min

Gold Plating Shape After Resist Removal

L/S=20/20μm 20μm Square Pillar Plating Shape
L/S=20/20μm 20μm Square Pillar Plating Shape

Palladium Plating Shape

Palladium Plating Shape
Palladium Plating Shape
Palladium Plating Shape
Palladium Plating Shape

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