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Bump Formation Resist
Resist for Photobumping for Copper, Tin, Nickel and Solder Electrolytic Plating such as Au Bumping, Cu Pillar and Microbumping
This type of resist is used in high-density semiconductor packaging for 2.5/3D through-silicon packages, TSV stacked memory, WL-CSP (wafer-level chip size packages), Cu pillar/Philip chip packages and LCD driver microbumps/monstat bumps/Cu posts. It is a high-resolution positive thick film resist for electroplating that is resistant to non-cyanide metal, silver, tin, copper, and nickel plating solutions.
This type of resist is capable of forming fine hole patterns with high sensitivity. The resist has a high adhesion to the substrate and a high process margin in the plating process, and can be easily removed after the plating process compared to negative resists. This makes it possible to reduce the cost of the bump electrode formation process. A wide range of resists are available for various thicknesses from 10～100µm. We offer a wide range of process materials for high level semiconductor packaging technology such as SiP (System in Package) and PoP (Package on Package).
Electrolytic Plating Photoresist Lineup
Photoresist for Cu Pillars and Microbumps
Cu Pillar Bump, Sn/Ag Bump, Microbump Formation
PMER P-BZ4000
This is a positive photoresist for the plating process with high resolution and plating solution resistance, and has been designed to meet the needs of the most demanding applications such as Cu Pillar BGA and TSV memory microbumps. This system can be used for electroplating of Cu, Ni and SnAg. The resist can be easily removed after the plating process without damaging the electrode. This product is available in a variety of viscosities for resist thicknesses from 20～65μm.
Features
- Positive tone type
- Developer: NMD-3 2.38% (TMAH 2.38%)
- Resist film thickness: 20µm〜65µm
- Wide process margin & crack margin
- Rectangular shape & good peelability
Resist Profile
| S/H 30μm | S/H 20μm | S/H 15μm | |
|---|---|---|---|
| Resist Thickness 65μm |
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Conditions
Substrate
Cu
P.A.B.
145℃, 300sec
Exposure
g-, h-, i-line stepper
P.E.B.
100℃, 180sec
Development
NMD-3 2.38%, 23℃, 60sec x 5 paddles
PMER P-BZ2000
This is a positive photoresist for the plating process with high resolution and plating solution resistance, and has been designed to meet the needs of the most demanding applications such as Cu Pillar BGA and TSV memory microbumps. This system can be used for electroplating of Cu, Ni and SnAg. The resist can be easily removed after the plating process without damaging the electrode. This product is available in a variety of viscosities for resist thicknesses from 20～65μm.
Resist Profile
| Line / Space | L/S 10μm | L/S 8μm | L/S 6μm | L/S 5μm | L/S 4μm |
|---|---|---|---|---|---|
| Resist Thickness 20μm |
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Conditions
Substrate
Cu
P.A.B.
145℃, 300sec
Exposure
g-, h-, i-line stepper, 300mJ/cm2
P.E.B.
95℃, 180sec
Development
NMD-3 2.38%, 23℃, 60sec x 2 paddles
PMER P-CS Series
This series of resists can be used for precious metal plating processes such as gold and palladium, and has high resistance to metal plating solutions.
Features
- Fine gold plating
- Positive tone type
- Suitable film thickness range = 10～20μm
Photolithography Conditions
Substrate
Au
Film Thickness
20μm
Gold Plating Conditions
Pretreatment
O2 plasma ashing
0.15torr, 300W, 40℃, 60s
Plating
Cyanide gold plating solution
Resist Stripping
TOK's resist stripper ST120
Pd Plating Conditions
Plating Solution Type
Pd plating solution pH = 7.5
Plating Conditions
1.5ASD 50℃, 48.6min
Pd Plating Thickness
18um
Resist Stripping
ST-120, 45℃, 10min
Gold Plating Shape After Resist Removal
| L/S=20/20μm | 20μm Square Pillar Plating Shape |
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Palladium Plating Shape
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