Development of Chemically Amplified Resists Compatible with 193nm Laser

Development of Chemically Amplified Resists
Compatible with 193nm Laser

Since the latter half of 1990, we have been developing chemically amplified resists that are compatible with 193nm long krypton fluoride (KrF) laser light sources. Throughout these years, we have been offering a wide range of products such as positive type, negative type, and thick film type to meet the various needs of our customers.

Positive KrF Resist for Lines

This resist was designed and developed for line formation. It is used in a wide range of applications including metal and implant applications.

TDUR™-P3435

Conditions

Substrate

Si with HMDS

Resist Thickness

250nm; (Nf:1.56 at 633nm) / 
190nm; (Nf:1.56 at 633nm)

Pre-bake

100℃, 60sec

TARC

TARC 44nm (RI=1.44 at 633nm)

TARC Bake

60℃, 60sec

Exposure

KrF stepper (NA: 0.75, σ: 0.60)

P.E.B

110℃, 60sec

Reticle

TOK-248-010 (6% half tone)

Development

NMD-3 2.38%, 23℃, 60sec, LD nozzle

Post-bake

100℃, 60sec

Target

Target CD: 150nm line
(Mask: 150nm, Pitch: 330nm)

Overview

  TPR=250nm TPR=190nm
Profile LS Profile LS / TPR=250nm Profile LS / TPR=190nm
ISO Profile ISO / TPR=250nm Profile ISO / TPR=190nm
Trench Profile Trench / TPR=250nm Profile Trench / TPR=190nm

Positive KrF Resist for Holes

This resist was designed and developed for hole formation. It is used in various processes including contact hole formation.

TDUR-P4197T PM

Substrate

BARC

Film Thickness

430nm(R.I.:1.56@633nm)

Pre-bake

90℃, 60sec

Exposure

KrF stepper (NA: 0.75, σ: 2/3 annular)

Mask

TOK Reticle (HT 6%)

P.E.B

110℃, 60s

Development

NMD-3 2.38%, 60s, Paddle

Target: Hole/Mask/Pitch = 123/150/300

  -0.20 -0.15 -0.10 -0.05 0 0.05 0.10
TPR:340nm
Exp:75mJ/cm2
-0.20: TPR:340nm Exp:75mJ/cm2 -0.15: TPR:340nm Exp:75mJ/cm2 -0.10: TPR:340nm Exp:75mJ/cm2 -0.05: TPR:340nm Exp:75mJ/cm2 0: TPR:340nm Exp:75mJ/cm2 0.05: TPR:340nm Exp:75mJ/cm2 0.10: TPR:340nm Exp:75mJ/cm2
TPR:430nm
Exp:79mJ/cm2
  -0.15: TPR:430nm Exp:79mJ/cm2 -0.10: TPR:430nm Exp:79mJ/cm2 -0.05: TPR:430nm Exp:79mJ/cm2 0: TPR:430nm Exp:79mJ/cm2 0.05: TPR:430nm Exp:79mJ/cm2 0.10: TPR:430nm Exp:79mJ/cm2
TPR:520nm
Exp : 86mJ/cm2
  -0.15: TPR:520nm Exp:86mJ/cm2 -0.10: TPR:520nm Exp:86mJ/cm2 -0.05: TPR:520nm Exp:86mJ/cm2 0: TPR:520nm Exp:86mJ/cm2 0.05: TPR:520nm Exp:86mJ/cm2 0.10: TPR:520nm Exp:86mJ/cm2

Negative KrF Resist

A wide range of KrF resists are available for the photolithography and post process applications that require properties of negative type resists.

TDUR-N Series

Substrate

BARC

Resist

TDURTM-N Series

Film Thickness

400nm (Nf:1.58)

Pre-bake

90-100℃, 60sec

Exposure

KrF stepper (θ: 2/3 annular)

P.E.B.

110℃, 60s

Reticle

HT 6%

Development

NMD-3 2.38%, 60s

TDUR™-N series
  TDUR-N Series
38mJ / cm2
TDUR-N Series
38mJ / cm2
TDUR-N Series
38mJ / cm2
300nm TDUR-N Series 38mJ/cm2:300nm TDUR-N Series 38mJ/cm2:300nm TDUR-N Series 38mJ/cm2:300nm
250nm TDUR-N Series 38mJ/cm2:250nm TDUR-N Series 38mJ/cm2:250nm TDUR-N Series 38mJ/cm2:250nm
200nm TDUR-N Series 38mJ/cm2:200nm TDUR-N Series 38mJ/cm2:200nm TDUR-N Series 38mJ/cm2:200nm
180nm TDUR-N Series 38mJ/cm2:180nm TDUR-N Series 38mJ/cm2:180nm TDUR-N Series 38mJ/cm2:180nm
170nm TDUR-N Series 38mJ/cm2:170nm TDUR-N Series 38mJ/cm2:170nm TDUR-N Series 38mJ/cm2:170nm
160nm TDUR-N Series 38mJ/cm2:160nm TDUR-N Series 38mJ/cm2:160nm TDUR-N Series 38mJ/cm2:160nm
150nm TDUR-N Series 38mJ/cm2:150nm   TDUR-N Series 38mJ/cm2:150nm
140nm TDUR-N Series 38mJ/cm2:140nm   TDUR-N Series 38mJ/cm2:140nm
130nm TDUR-N Series 38mJ/cm2:130nm   TDUR-N Series 38mJ/cm2:130nm

 

Thick Film KrF Resist

A positive resist that can ensure a film thickness of even 10μm, this product is used for thick film plating and staircase layer formation.

TGMR-DP033 AE

Features

  • Specifically designed resist for thick film patterning
  • High resolution and vertical profile even in thick film

Conditions

Substrate

Si (HMDS treatment)

Resist Thickness

3.5um (RI: 1.68)

Pre-bake

140℃, 60sec

Exposure

KrF stepper (NA: 0.60/0.85)

P.E.B.

110℃, 60sec

Development

NMD-3 2.38%, 23℃, 60sec

TGMR™-DP033 AE

TGMR in the text is a pending or registered trademark of TOK.

TDUR-P9001 CO

Profile

  • ISO Trench Target CD Size: 1.5μm
TDUR™-P9001 CO

Conditions

Substrate

Si with HMDS

Resist Thickness

9.2μm (RI: 1.56)

Pre-bake

140℃, 60sec

Exposure

KrF stepper (NA: 0.55, σ: 0.49)

Reticle

Binary Reticle

P.E.B

110℃, 60sec

Development

NMD-3 2.38%, 23℃, 60sec

Post-bake

100℃, 60sec

Target CD

Trench: 1.5μm space / 16.5μm pitch ; Dot: 1.5μm space / 12.0μm pitch

TDUR in the text is a pending or registered trademark of TOK.

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