Lift-Off Resist

Positive and Negative Photoresists for Lift-Off

We offer both positive and negative photoresists that can form lift-off shapes with a single layer and a single exposure. These resists are compatible with film formation process by sputter deposition, and are easily removable with common organic solvents.

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Resist for Lift-Off Process

Negative Type

This is a negative photoresist developed in alkaline solution that can form a reverse tapered profile with a single exposure, and can handle a wide range of resist thicknesses from 1〜6μm. Furthermore, standard stripping solution can be used to remove the resist.

Features

• Negative-tone type
• Reverse taper profile
• Resist film thickness: 1.0〜6.0μm

Focus	Resist Thickness = 6μm Eop 120mJ/cm2		Resist Thickness = 3μm Eop 100mJ/cm2		Resist Thickness = 1μm Eop 80mJ/cm2
	Profile	C.D./Angle	Profile	C.D./Angle	Profile	C.D./Angle
-1.5μm		10.2μm/73°		10.1μm/75°		10.2μm/53°
0μm		10.1μm/74°		10.1μm/75°		10.2μm/53°
1.5μm		10.0μm/75°		10.1μm/75°		10.2μm/53°

Application Conditions

Substrate

Si (HMDS treatment)

Resist Thickness

6μm, 3μm, 1μm

P.A.B.

120℃, 90sec

Exposure

g-, h-, i-line stepper (NA: 0.16)

P.E.B.

110℃, 90 sec

Development

NMD-3 2.38%, 120sec

Positive Type

This is a positive photoresist developed in alkaline water solution for the lift-off process. It has the features of a positive photoresist, such as high resolution and good stripping properties, which can be used for minimization of the lift-off process.

Features

• Positive-tone type
• Good peelability
• Resist film thickness: 2.0〜4.0μm

Resist Film Thickness
2μm		3μm		4μm
Profile	Undercut Dimensions	Profile	Undercut Dimensions	Profile	Undercut Dimensions
	A=0.30μm B=0.38μm		A=0.35μm B=0.49μm		A=0.49μm B=0.61μm

Application Conditions

Substrate

Si (HMDS treatment)

P.A.B.

90℃, 90sec

Exposure

i-line stepper (NA: 0.63)

P.E.B.

110℃, 90 sec

Development

NMD-3 2.38%, 60sec

TLOR in the text is a pending or registered trademark of TOK.