General Purpose G- and I-Line Resists for Semiconductors and MEMS

General Purpose G- and I-Line Resists for
Semiconductors and MEMS

We offer both positive and negative resists for g-, h-, and i-line projection exposure with long wavelengths as well as for high NA g- and i-line stepper exposure systems. We offer a wide range of resists, including thick film types, high-sensitivity types, dye-infused types for high-reflection substrates such as polysilicon and tungsten wiring, etc. The following is a list of our representative products. Please feel free to contact us for regarding these or additional types of products.

G-Line Resist

G-Line Positive Resist OFPR™,TSMR™Series

Substrate

Bare-Si (HMDS coated)

Film thickness

1.26μm

Pre-bake

90℃, 90sec; 110℃, 90sec
(no post exposure bake)

Exposure

g-line stepper (NA: 0.54)

Post Exposure
Bake (P.E.B.)

110℃, 90sec
(alternatively, no P.E.B.)

Development

NMD-3 2.38%, 60sec

Post-bake

110℃, 90sec (proximity)

G-Line Positive Photoresist

OFPR™Series、TSMR™Series

These are positive photoresists with a photosensitive wavelength corresponding to the g-line (436nm).
Depending on the series, high resolution target dimensions of down to 0.7μm are possible with minimal striation. Within the OFPR™ series, OFPR™-800 has been widely used as a g-line positive photoresist in combination with the organic alkaline developer OFPR™-NMD-3 2.38%. The TSMR™ series is characterized by high-resolution resists for use with higher NA steppers. We also offer a wide variety of products, including the TSMR-V series, which features a rectangular shape, and the dye-infused TSMR-CR, which is designed for use with high-reflection substrates.

TSMR™-V90

Features
  • Excellent resolution and overall fidelity of 0.45μm with NA 0.54 stepper
  • Wide DOF tolerance to maintain good pattern quality
  • Higher sensitivity and higher throughput
  • Excellent dimension control due to reduced standing wave effects

Substrate

Si (HMDS)

Film Thickness

1.25μm

Pre-bake

100℃, 60sec

Exposure

120℃, 90sec

Development

NMD-3 2.38%,
23℃, 60sec

P.E.B

120℃, 90sec

Resolvability
  0.4μm 0.45μm 0.5μm 0.6μm 0.7μm 0.8μm
TSMR-V90
Eth:215ms
Eop:418ms
(0.8μm)
TSMR-V90 Eth:215ms Eop:418ms(0.8μm) / 0.4μm TSMR-V90 Eth:215ms Eop:418ms(0.8μm) / 0.45μm TSMR-V90 Eth:215ms Eop:418ms(0.8μm) / 0.5μm TSMR-V90 Eth:215ms Eop:418ms(0.8μm) / 0.6μm TSMR-V90 Eth:215ms Eop:418ms(0.8μm) / 0.7μm TSMR-V90 Eth:215ms Eop:418ms(0.8μm) / 0.8μm
TSMR-V3HS
Eth:270ms
Eop:550ms
(0.8μm)
TSMR-V3HS Eth:270ms Eop:550ms(0.8μm) / 0.4μm TSMR-V3HS Eth:270ms Eop:550ms(0.8μm) / 0.45μm TSMR-V3HS Eth:270ms Eop:550ms(0.8μm) / 0.5μm TSMR-V3HS Eth:270ms Eop:550ms(0.8μm) / 0.6μm TSMR-V3HS Eth:270ms Eop:550ms(0.8μm) / 0.7μm TSMR-V3HS Eth:270ms Eop:550ms(0.8μm) / 0.8μm

OFPR&TSMR in the text is a pending or registered trademark of TOK.

Please Feel Free to Contact Us for More Information

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I-Line Resist

I-Line Positive Resist TSMR™,THMR™-iP,THMR™-AR Series

Substrate

Bare-Si (HMDS coated)

Film Thickness

Refer Above

Pre-bake

90℃, 90sec (proximity)

Exposure

i-line stepper (NA: 0.57, σ: 0.56)

P.E.B.

110℃, 90sec (alternatively, no P.E.B.)

Development

NMD-3 2.38%, 60sec

Post-bake

110℃, 90sec (proximity)

I-Line Positive Photoresist

TSMR™、THMR™-iP、TDMR™-AR Series

A photoresist with a photosensitive wavelength corresponding to the i-line (365nm). High resolutions of down to 0.35μm lines and 0.4μm holes can be achieved with minimal striation. It is also easy to develop with TMAH, has low metal impurities such as Na and Fe, and is easy to strip away.

TDMR™-AR80

High-resolution i-line positive photoresist. Excellent for fine pattern formation.

Substrate

Si (HMDS)

Film Thickness

0.84μm

Pre-bake

90℃, 90sec

Exposure

i-line stepper (NA: 0.57)

P.E.B.

110℃, 90sec

Development

NMD-3 2.38%, 23℃, 60sec

Resolvability

Eth:190ms Eop:465ms

0.28μm 0.30μm 0.35μm 0.40μm
data image data image data image data image
DOF Performance

0.35μmL/S Eth:220ms Eop:540ms Film Thickness 1.05μm

0
data image
0.2 0.4 0.6 0.8 1.0
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-0.2 -0.4 -0.6 -0.8 -1.0
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DOF Performance

0.40μmC/H Eth:167ms Eop:779ms Film Thickness 0.84μm

0
data image
0.2 0.4 0.6 0.8 1.0
data image data image data image data image  
-0.2 -0.4 -0.6 -0.8 -1.0
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TSMR™-CR57i10

The dye content prevents halation caused by reflected light on Al and other high-reflection substrates,
enabling patterning.

Substrate

Si (HMDS)

Film Thickness

2.1μm

Pre-bake

90℃, 90sec

Exposure

i-line stepper (NA: 0.57)

P.E.B.

110℃, 90sec

Development

NMD-3 2.38%, 23℃, 60sec

Post-bake

100℃, 60sec

Resolvability

Eop 1.5μL/S

0.38μm 0.4μm 0.5μm 0.6μm 0.8μm 1.0μm
data image data image data image data image data image data image
1.2μm 1.5μm 2.0μm
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DOF Performance

Eop 1.55μm L/S 350ms Film Thickness 2.1μm

0
data image
0.3 0.6 0.9 1.2 1.5
data image data image data image data image data image
-0.3 -0.6 -0.9 -1.2 -1.5
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I-Line Negative Photoresist

TSMR-iN Series

This is a negative photoresist with a photosensitive wavelength corresponding to the i-line (365nm). It has high heat resistance and high wet/dry etching resistance.

TSMR™-iN080

It is excellent for covering stepped substrates with thicker films and while reducing developer residue.

Film Thicknes

3μm

Pre-bake

90℃, 120sec

Exposure

i-line stepper (NA: 0.57)

P.E.B.

110℃, 60sec

Development

NMD-3 2.38%, 23℃, 60sec

Post-bake

100℃, 60sec

Resolvability

700nm

-0.6 -0.3 0 0.3
data image data image data image data image
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DOF Performance

Substrate

Si (HMDS)

Film Thickness

5.8μm

Pre-bake

90℃, 120sec

Exposure

i-line stepper (NA: 0.57)

P.E.B.

110℃, 60sec

Development

NMD-3 2.38%, 120sec

5μm Space

0
data image
1.0 1.5 2.5 3.0 3.5
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-1.0 -1.5 -2.5 -3.0 -3.5
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Heat Resistance

Film Thickness: 5.8μm, Post-bake Time: 300sec

none
data image
140℃ 150℃ 160℃ 200℃ 250℃ 300℃
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TSMR, THMR and TDMR in the text are pending or registered trademarks of TOK.

Please Feel Free to Contact Us for More Information

For any questions or concerns,

Send an Inquiry Through the Web

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