Deep Dry Etching Resist

Thick Film Positive Resist Suitable for Deep Etching of Si

Thick film resists are available for both Bosch and non-Bosch dry etching methods for deep etching of Si substrates used in MEMS and TSV.

PMER P-CY1000

Compatible with Deep Etching of Si
Substrates by Non-Bosch Method (RIE)

PMER™ P-CY1000 has good crack resistance even under low substrate temperature conditions during dry etching (-15℃, 30min), and also prevents resist cracking caused by substrate cooling during the use of the Bosch silicon etching (RIE) method, enabling stable etching.

Deep Ion Etching

  Before Etching Treatment Resist Removal After Etching
PMER P-CY1000 Before Etching Treatment:PMER™ P-CY1000
Si Substrate 10μm Pattern
Resist Removal After Etching:PMER™ P-CY1000

Crack Test

  Pattern Area Resist Area
PMER
P-CY1000
Pattern Area:PMER™ P-CY1000
No Cracking
Resist Area:PMER™ P-CY1000
No Cracking
Normal I-Line Resist Resist Area:Normal I-Line Resist
Cracking
Resist Area:Normal I-Line Resist
Cracking

PMER in the text is a pending or registered trademark of TOK.

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