Thick Film Positive Resist Suitable for Deep Etching of Si
Thick film resists are available for both Bosch and non-Bosch dry etching methods for deep etching of Si substrates used in MEMS and TSV.
Compatible with Deep Etching of Si
Substrates by Non-Bosch Method (RIE)
PMER™ P-CY1000 has good crack resistance even under low substrate temperature conditions during dry etching (-15℃, 30min), and also prevents resist cracking caused by substrate cooling during the use of the Bosch silicon etching (RIE) method, enabling stable etching.
Before Etching Treatment | Resist Removal After Etching | |
---|---|---|
PMER P-CY1000 | ![]() Si Substrate 10μm Pattern |
![]() |
Pattern Area | Resist Area | |
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PMER P-CY1000 |
![]() No Cracking |
![]() No Cracking |
Normal I-Line Resist | ![]() Cracking |
![]() Cracking |
PMER in the text is a pending or registered trademark of TOK.
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