Deep Dry Etching Resist

Thick Film Positive Resist Suitable for Deep Etching of Si

Thick film resists are available for both Bosch and non-Bosch dry etching methods for deep etching of Si substrates used in MEMS and TSV.

PMER P-CY1000

Compatible with Deep Etching of Si
Substrates by Non-Bosch Method (REI)

PMER™ P-CY1000 has good crack resistance even under low substrate temperature conditions during dry etching (-15℃, 30min), and also prevents resist cracking caused by substrate cooling during the use of the Bosch silicon etching (REI) method, enabling stable etching.

Deep Ion Etching

	Before Etching Treatment	Resist Removal After Etching
PMER P-CY1000	Si Substrate 10μm Pattern

Crack Test

	Pattern Area	Resist Area
PMER P-CY1000	No Cracking	No Cracking
Normal I-Line Resist	Cracking	Cracking

PMER in the text is a pending or registered trademark of TOK.

TCIR-ZR8800

Most Suitable for Deep Etching of Si by Bosch Method with High Resolution, High Heat Resistance, and Rectangular Shape Even Under Thick Film Conditions

TCIR™-ZR8800 is an i-line resist for thick films up to 10μm with high heat resistance and rectangular shaped patterns. This resist maintains a stable shape even in Bosch deep etching of silicon, enabling vertical etching of silicon with low roughness.

	Normal I-Line Resist	TCIR-ZR8800
High Resolution (Film Thickness = 3μm, L/S = 0.6/0.6μm)
High Heat Resistance (Post-bake: 110℃, 300sec)
Rectangular Shape (Film Thickness = 6μm)

TCIR in the text is a pending or registered trademark of TOK.