Redistribution Layer (RDL) Photoresist

Photoresist for Redistribution Layer (RDL) Plating

We offer a wide range of resists for rewiring and plating from thin to thick films of 2～20µm. We provide the latest in high-density semiconductor packaging technology with our resists characterized by high resolution and DOF margin, including applications in 2.5D/3D semiconductor packaging, TSV-Si through-electrode stacked memory, WL-CSP (Wafer Level Chip Size Package), FOWLP/FOPLP (Fan Out Wafer-/Panel-Level Package), and forming fine RDLs on silicon interposers. We offer both naphthoquinone-type resists with excellent resistance to mounting environments and chemical amplification type resists with high resolution. We also offer products that can be used in a variety of processes, including a high-resolution type that can be used with Na2CO3 inorganic alkaline developer.

TMMR P-W1000T

This product is an NQD-based photoresist for forming high-resolution RDLs, which can be used in NQD-based processes without being affected by the environment.

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Features

Positive type
Developer：NMD-3 2.38% (TMAH 2.38%)
Resist film thickness： 4〜12μｍ
High resolution, rectangular profile, good peelability

Lithography Image

	Resist Pattern Shape	After Cu Plating	After Resist Removal
Resist Thickness　5μm L/S ： 2μm / 2μm
Resist Thickness　8μm L/S ： 3μm / 3μm
Resist Thickness　8μm L/S ： 6μm / 6μm

Conditions

Substrate

P.A.B.

110℃, 90sec

Exposure

i-line stepper

Development

NMD-3 2.38% (TMAH 2.38%),
60sec x 2 paddles

Stripping

ST104 70℃, 600sec

TMMR in the text is a pending or registered trademark of TOK.

PMER P-BZ Series

This is a photoresist for RDL formation for thick films of 8～20μm. A rectangular shape can be obtained even in thick film areas.

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Features

Positive type
Developer：NMD-3 2.38% (TMAH 2.38%)
Resist film thickness: 8〜20μm
Wide process margin, good peelability

Resist Pattern Shape

Line/Space	10μm/10μm	8μm/8μm	6μm/6μm	4μm/4μm
Resist Thickness 20μm

Conditions

Substrate

P.A.B.

140℃, 330sec

Exposure

g-, h-, i-line stepper (NA: 0.18)

P.E.B.

100℃, 180sec

Development

TMAH 2.38%, 60sec x 2 paddles

PMER P-CM Series

This series of photoresist for ultra-high resolution RDL formation, which is used to form 1.5μm patterns, has an extremely wide defocus margin and good plating solution resistance.

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Features

Positive type
Developer：NMD-3 2.38% (TMAH 2.38%)
Resist film thickness：3〜12μm
Wide DOF margin, good peelability

Resist Profile

Line/Space	2μm/2μm	1.5μm/1.5μm
Resist Thickness　6μm

DOF Margin

	-4μm	-8μm	-12μm
Resist Thickness 6μm Center Profile Dimensions = 2.5μm L/S	+4μm	+8μm	+12μm

Conditions

Substrate

P.A.B.

130℃, 300sec

Exposure

i-line stepper (NA: 0.18)

P.E.B.

100℃, 90sec

Development

NMD-3 2.38% (TMAH 2.38%),
30sec x 2 paddles

PMER P-CP50

Slit coater coating is also possible, with this high-resolution resist for RDL formation that is suitable for the panel-level packaging process of large substrates and has excellent characteristics for h-line specialized exposure systems.

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