Tokyo Ohka Kogyo Product Site
ArF Resist
Photoresist Lineup Supporting the Most Advanced ArF Lithography Technologies
As a leading manufacturer of photoresists, we offer a wide range of photoresists that support advanced micropatterning by semiconductor ArF photolithography processes, including ArF dry exposure, immersion exposure, and multi-patterning technologies such as DTD and PTD, securing top market share in this field.
Positive ArF Resist for Lines
These resists are designed and developed for line formation.
TARF-P6111
Conditions
Substrate
BARC on Si
Resist Thickness
250nm
P.A.B
130℃, 60sec
Exposure
ArF stepper
Exposure Condition
NA: 0.85, σ: 0.60
True Camphor
Binary
P.E.B
130℃, 60sec
Development
TMAH 2.38%, LD nozzle, 30sec
Data
| 130nm LS (19.6mJ) |
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|---|---|---|
| 130nm Iso-L |  |
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| 130nm Iso-S |  |
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| LS | Iso-L | Iso-S | |
|---|---|---|---|
| DOF@5% EL +/- 10% CD |
0.39um | 0.33um | 0.17um |
| DOF (um) | -0.15 | -0.12 | -0.09 | -0.06 | -0.03 | F.C | +0.03 | +0.06 | +0.09 | +0.12 | +0.15 |
|---|---|---|---|---|---|---|---|---|---|---|---|
| 130nm LS |  |
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| 130nm iso-L |  |
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| 100nm iso-S |  |
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Positive ArF Resist for Holes
These resists are designed and developed for hole formation.
TARF-P7052
Data
| -0.30 | -0.20 | -0.10 | 0 | +0.01 | +0.20 | +0.30 | |
|---|---|---|---|---|---|---|---|
| Pitch 300nm |
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TARF in the text is a pending or registered trademark of TOK.
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