EB Resists with Photosensitivity to 13.5nm
These are resists with photosensitivity to 13.5nm electron beam radiation. This product is mainly used for semiconductor photomask production. Both positive and negative types are available with high sensitivity and pattern stability.
Three positive types of resist are available, of which one has sensitivity priority and one has resolution priority.
Two types of negative type resist are available, one with sensitivity and one with resolution priority.
EBR in the text is a pending or registered trademark of TOK.
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