We offer a heat treatment system that enables high-precision temperature control of the substrate surface under ultra-low oxygen concentrations and rapid temperature rise and fall for large square substrates.
High Speed Heat Treatment With Excellent Temperature Uniformity Across Entire Surface of Substrate Under Ultra-Low Oxygen Concentration and Rapid Temperature Rise and Fall For Large Square Substrates
This single-wafer baking system enables rapid temperature rise and fall under ultra-low oxygen concentration and high uniformity temperature control within the substrate surface for large square substrates (6 generation, 4.5 generation).
The single-wafer baking system enables high-precision baking processing with high-precision substrate temperature control and no variation within or between substrates.
Application Example: polyimide varnish baking
|Processing Method||Single-wafer type (Maximum 3 units can be loaded)|
|Heat Source||IR Heater|
|Applicable Substrate Size||TN90000N Series：1500×1850(mm) 、TN45000N Series：730×920(mm)|
|Maximum Baking Temperature||500°C|
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